Columnar grain growth of FePt(L10) thin films

Columnar grain growth of FePt(L10) thin films

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Grain Growth Mechanism of Cu Thin Films

Since Cu was found to be attractive as interconnect materials for ultra-large scale integrated (ULSI) Si devices, the electrical properties of Cu films have been extensively studied to prepare low resistance films. It was found in our previous papers that reduction of the electrical resistance of the Cu films was achieved by increasing grain sizes of the Cu films and large-grained Cu films were...

Ion beam enhanced grain growth in thin films

A research program has been established to study ion beam enhanced grain growth (IBEGG). Ion beam enhanced grain growth has been studied experimentally in Ge, Au and Si films. IBEGG has been characterized by varying the ion dose, ion energy, ion flux, ion species, temperature, and thin film deposition onrditions. The effect of these parameters on grain size and microstructure has Leen analyzed ...

A Mathematical Model for Grain Growth in Thin Metallic Films

We use geometrical arguments based on grain boundary symmetries to introduce crystalline interfacial energies for interfaces in polycrystalline thin lms with a cubic lattice. These crystalline energies are incorporated into a multi{phase eld model. Our aim is to apply the multi{phase eld method to describe the evolution of faceted grain boundary triple junctions in epitaxially growing microstru...

Magneto-optical properties of cobalt slanted columnar thin films